化学机械抛光机
CMP Pro-6 Chemical Mechanical Polishing Excellence
Rtec-Instruments CMP Pro-6 化学机械抛光机是一款高性能台式 CMP 系统,专为研究、工艺开发和抛光耗材评估而设计。 CMP Pro-6 结合了精确的下压力控制、可编程的研磨盘和载片架速度、自动研磨液输送以及原位或离位调理功能,使工程师能够以卓越的重复性优化抛光配方。 其坚固的平台可容纳最大 6 英寸的晶圆,同时支持先进半导体、MEMS、光学和材料抛光工艺的开发。无论是提高去除率、晶圆内均匀性、抛光垫调理还是抛光浆料性能,CMP Pro-6 都能提供所需的灵活性和控制力,以加速 CMP 创新并提高制造良率。
主要特点
Precise Process Control
Precisely control every polishing parameter with programmable platen speed, carrier speed, and adjustable downforce. The Rtec-Instruments CMP Pro-6 delivers exceptional repeatability for optimizing removal rate, surface finish, and within-wafer uniformity. Reproduce polishing conditions with confidence while accelerating process development and reducing experimental variability.
Fully Programmable Slurry Delivery
Integrated programmable slurry and DI water delivery ensure consistent fluid distribution throughout every polishing cycle. Evaluate new slurry chemistries, optimize polishing recipes, and improve process stability while reducing slurry consumption. Automated delivery enhances repeatability and minimizes operator influence for reliable CMP process development.
Versatile Wafer Handling
Support multiple wafer sizes using interchangeable carrier heads for 2", 4", and 6" substrates. The versatile platform enables polishing of semiconductor wafers, MEMS devices, optical materials, and advanced ceramics on a single system, providing maximum flexibility for research laboratories and process development.
Advanced Pad Conditioning
Integrated in-situ and ex-situ pad conditioning maintains consistent pad surface properties throughout polishing. Optimize conditioning parameters, extend pad lifetime, and improve polishing uniformity while evaluating pad performance under realistic operating conditions. Achieve stable, repeatable CMP results across every stage of process development.
Designed for CMP Research & Development
Purpose-built for CMP research, the Rtec-Instruments CMP Pro-6 provides the flexibility required to develop and optimize polishing processes, consumables, and materials. Investigate polishing pads, slurries, conditioners, and wafer materials while accelerating process innovation before transferring optimized recipes to production environments.
更多相关信息
CMP的典型应用
半导体制造
- 硅片抛光
- 氧化物(SiO₂)平坦化
- 铜CMP
- 介电层化学机械抛光
- 先进逻辑与存储器件
MEMS制造
- 表面平坦化
- 微加工工艺开发
- MEMS晶圆后处理
CMP工艺开发
- 去除率优化
- 晶圆内不均匀性研究
- 食谱研发
- 工艺可重复性评估
CMP耗材评估
- 抛光垫的性能
- 浆料开发
- 调理剂优化
- 背衬膜评估
材料研究
- 先进陶瓷
- 玻璃抛光
- 蓝宝石衬底
- 化合物半导体(SiC、GaN)
- 光学材料
大学与研究实验室
- CMP工艺培训
- 新型抛光化学品
- 表面处理研究
- 材料表征


| Platen Diameter | 380 mm |
|---|---|
| Platen Speed | 1-100 rpm |
| Wafer Size | up to 6” Wafer |
| Max Downforce | 25kgf |
| Head rpm | 1 - 100 rpm |
| Conditioner | 4.25” diameter |
| Additional Options | Carrier head for 6’’’,4’’’,2” wafers |
| Power | 220V, 30A |
| Size: | 870 x 800 x 870mm |
